Insights into Cu2O thin film absorber via pulsed laser deposition

نویسندگان

چکیده

Cuprous oxide materials are of growing interest for optoelectronic devices and were produced by several chemical physical methods. Here, we report on the structural, optical, electrical properties Cu x O thin films prepared pulsed laser deposition technique. The substrate temperature, as well oxygen partial pressure in chamber, varied to monitor copper ratio within deposited films. growth conditions carefully optimized provide highest conductivity mobility. Thus, 100 nm thick cuprous (Cu 2 O) at 750 °C exhibited a resistivity 16 Ω∙cm, high mobility 30 cm /(V∙s), bandgap around eV. film parameters Nb:STO (001) with Au top electrode showed photovoltaic response an open circuit voltage 0.56 V. These results path way efficient solar cells made via

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ژورنال

عنوان ژورنال: Ceramics International

سال: 2022

ISSN: ['0272-8842', '1873-3956']

DOI: https://doi.org/10.1016/j.ceramint.2022.02.061